random access memory

Dynamic random access memory.

动态随机访问存储器.

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The study of magnetoresistance ( MR) is one of the most exciting topics, due to its great importance for technical applications as hard-disk read heads and magnetic storage media like magnetoresistance random access memory.

由于磁电阻效应在硬盘驱动磁头和磁随机存取存储器等方面的技术应用起着极其重要的作用，因而它是人们研究的热点之一。

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Primary memory is known as random access memory ( RAM ) and simple named memory.

主存储器又称为随机存取存储器,简称内存.

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RAM stands for Random Access Memory.

RAM的全名是随机储存记忆体.

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Studies of new spin tunneling junctions for MRAM and their applications to magnetic random-access memory.

新的自旋穿隧结元件之研究及对磁记忆体之应用.

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Ferroelectric random access memory ( FRAM ) with a-volatile, and can read and write as quickly as RAM.

铁电随机存储器 ( FRAM ) 具有非易失性, 并且可以象RAM一样快速读写.

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Phase-change random access memory ( PCM) records and erases data by utilizing the thermal effect of the pulse current to make SET or RESET operation in its recording layer with a reversible phase-change structure of giant differential resistance between two phases.

相变存储器是利用脉冲电流的热效应使其记录层发生具有巨大阻值差异的可逆结构相变来记录和擦除数据。

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DNA random access memory takes circular single-stranded DNA as storing matter and uses four nitrogenous bases ( Adenine, Guanine, Cytosine and Thymine) to code data.

DNA随机存储器以环状单链DNA分子为存储介质，以4种碱基（腺嘌呤adenine、鸟嘌呤guanine、胞嘧啶cytosine和胸腺嘧啶thymine）对信息进行编码；

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Single event multiple upset ( SEMU ) experimental results of high-density static random access memory ( SRAM ) are presented.

给出典型大容量静态存储器 ( SRAM ) 的多位翻转实验研究结果.

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This design uses two-port Random Access Memory ( RAM) in FPGA as data buffer, so it is very convenient because PCI-E bus and local bus can accesses it though respective port.

为了增加系统的灵活性，在FPGA中设计了双端口随机存储器（RAM）作为数据的缓存区，PCI-E总线和本地总线可以通过各自的接口对其独立的访问。

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The present application of the GMR effect is mainly on the magnetic sensor, the random access memory and high density read-write head.

目前，GMR效应主要用于磁传感器、随机存储器和高密度读写磁头等方面。

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